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Phase Structural Characteristics of ZrV2 Thin Film Prepared by Magnetron Sputtering |
| XU Shi-Lin; SHI Li-Qun |
| Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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XU Shi-Lin, SHI Li-Qun 2005 Chin. Phys. Lett. 22 1202-1204 |
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Abstract The thin film metal hydride has become an emerging field of research in metal hydride batteries for its good mechanical and hydrogenation properties. ZrV2 thin films have been prepared using a dc magnetron sputtering method, and the phase structure is investigated. Only amorphous or crystalline Zr and V mixture phases are achieved when substrates are heated during either to 400°C or to 550°C. The annealing causes segregation of Zr and V in the film induced by strain-driven diffusion and interdiffusion between substrate Mo and film elements at high temperature, which results in the formation of mixture phases of C14, C15, Zr and V, but the content of C15 phase is not higher compared with that in the bulk material.
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| Keywords:
68.55.-a
81.15.Cd
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Published: 01 May 2005
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.Cd
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(Deposition by sputtering)
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