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Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method |
| LIU Bo1;SONG Zhi-Tang1;FENG Song-Lin1; CHEN Bomy2 |
| 1Research Centre of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA |
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| Cite this article: |
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LIU Bo, SONG Zhi-Tang, FENG Song-Lin et al 2005 Chin. Phys. Lett. 22 758-761 |
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Abstract A single nano-cell-element of chalcogenide-random access memory was fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and the top electrode film for the cell element is with diameter of 60nm. The reversible phase transition between the RESET state and the SET state was successively realized. The minimum SET current is obtained to be about 0.28mA.
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| Keywords:
85.35.-p
81.30.Hd
85.30.De
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Published: 01 March 2005
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| PACS: |
85.35.-p
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(Nanoelectronic devices)
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81.30.Hd
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(Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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