|
Triaxial Superdeformed Band and Its Formation Mechanism in Odd--Odd-Nucleus 168Lu
Tu Ya, , YU Shao-Ying, , CHEN Yong-Shou, SHEN Cai-Wan, CHEN Yong-Jing
Chin. Phys. Lett. 2005, 22 (3):
568-571
.
Three-dimensional total Routhian surface calculations are carried out to determine the triaxial superdeformation of odd--odd nucleus 168Lu. One of the new four rotational bands observed in the experiment is identified as a triaxial superdeformed band, in which the neutron shell correction energy plays a key role and the deformation-driving effect of high j intruder orbital plays an additional role in the formation of triaxial superdeformation shape. Its deformation parameters (ε2,ε4, γ) are derived from the analysis, which can reproduce the experimental assignment.
|
|
One-Proton Halo Structure in 23Al
FANG De-Qing, MA Chun-Wang, MA Yu-Gang, CAI Xiang-Zhou, CHEN Jin-Gen, CHEN Jin-Hui, GUO Wei, TIAN Wen-Dong, WANG Kun, WEI Yi-Bin, YAN Ting-Zhi, ZHONG Chen, ZUO Jia-Xu, SHEN Wen-Qing
Chin. Phys. Lett. 2005, 22 (3):
572-575
.
The Glauber theory is used to investigate the reaction cross section of proton-rich nucleus 23Al. A core plus a proton structure is assumed for 23Al. HO-type density distribution is used for the core while the density distribution for the valence proton is calculated by solving the eigenvalue problem of Woods--Saxon potential. The transparency function in an analytical expression is obtained by adopting multi-Gaussian expansion for the density distribution. Coulomb correction and finite-range interaction are introduced. This modified Glauber model is suitable for halo nuclei. A dominate s-wave is suggested for the last proton in 23Al from our analysis which is possible in the calculation of relativistic mean-field theory.
|
|
Simultaneous Extension and Enhancement of the HHG Plateau by Using Combined Lasers Irradiating on a United Two-Atom System
CHEN Ji-Gen, CHEN Gao, YANG Yu-Jun, CHI Fang-Ping, DU Wen-He, ZHU Hai-Yan, ZHU Qi-Ren
Chin. Phys. Lett. 2005, 22 (3):
580-583
.
We present the high-order harmonic generation spectrum from a united two-atom system simultaneously exposed to a fundamental Ti:sapphire and its 33rd harmonic (H33) lasers by numerically solving a one-dimensional time-dependent Schrödinger equation. At a suitable inter-nuclear separation, the harmonic plateau is widened from Ip+3.2Up in the single-atom case up to Ip+5.6Up in the united-atom case. Furthermore, the plateau is heightened in excess of six orders of magnitude by using the combined lasers compared with the case of the fundamental laser alone. Such a scheme can step by step accomplish the following processes: through a single H33 photon resonance transition an appropriate amount of electrons are first populated to an excited state, in which the electrons are easily ionized and subsequently accelerated by the fundamental laser; then they can recombine with the neighbouring atom, so that high-efficiency emissions of the harmonics beyond Ip+3.2Up are successfully realized.
|
|
Frequencies-Selected Enhancement of the Extended High-Order Harmonic Generation Plateau from a United Two-Atom System Irradiated by a Combined Pulse
CHEN Gao, CHEN Ji-Gen, YANG Yu-Jun, ZHU Hai-Yan, DU Wen-He, CHI Fang-Ping, ZHU Qi-Ren
Chin. Phys. Lett. 2005, 22 (3):
584-587
.
We present a high-order harmonic generation (HHG) spectrum from a united two-atom system exposed to a combined laser pulse, by numerically solving a one-dimensional time-dependent Schrödinger equation. The combined laser pulse is composed of a low-frequency femtosecond pulse and a high-frequency attosecond one with respective appropriate amplitudes. For a suitable inter-nuclear separation, the harmonic emission efficiencies near the second cutoff of the extended plateau can be effectively enhanced by more than four orders of magnitude compared with the case of the low-frequency pulse alone. Such a combined pulse irradiating on the united two-atom system ionizes each atom, in a large rate (but not to a too large ionization yield), mainly at a particular time-interval. When the ionized electron from an atom reaches at the vicinity of the other atom and recombines with it, significant HHG enhancement is achieved for particular harmonics. This result, to our knowledge, is one of the best up to now in the endeavor for dramatically extending the width and simultaneously enhancing the height of the plateau.
|
|
Luminescent Enhancement in Mg- and Er-Codoped LiNbO3 Crystals
TANG Li-Qin, ZHAO Li-Juan, ZHANG Xin-Zheng, YU Hua, MENG Jie, LIANG Qin, XU Jing-Jun, KONG Yong-Fa
Chin. Phys. Lett. 2005, 22 (3):
588-590
.
We investigate the MgO codoping-induced effect on the luminescent properties of Er3+-doped and Er/Mg codoped LiNbO3 crystals. The emission and excitation spectra and the absorption spectra are measured. The results show that the luminescent behaviour of Er3+ ions is very sensitive to the codoping of Mg2+ ions. According to the photorefractive level theory, we propose a quench model for the Er/Mg codoped lithium niobate crystal. The quench centres are suggested to be the bipolaron (NbLi-NbNb), we attribute the luminescent enhancement to the decreasing concentration of these centres. The luminescent enhancement effect is successfully explained.
|
|
Grazing Incidence Pumping X-Ray Laser Scheme with Application of Paraboloid Mirrors
DONG Quan-Li, YAN Fei, ZHANG Jie, ZHONG Jia-Yong, ZHAO Jing, SHENG Zheng-Ming, LI Han-Ming, LI Ying-Jun
Chin. Phys. Lett. 2005, 22 (3):
603-606
.
A grazing incidence pumping x-ray laser scheme using JIGUANG II is proposed. We investigate the characteristics of the focusing of parabolas, and obtain the optimal intensity distributions in the target
surfaces with paraboloid mirrors of different parameters by the vectorial ray-tracing. Kinetic simulations are carried out. The results show that due to the enhancement of absorption by the selectable plasma
region (gain region), saturated amplification of the x-ray laser can be achieved with 100mJ energy in pre and pumping pulses, respectively, on 3mm Ti targets.
|
|
Reducing Thermal Effect in End-Diode-Pumped Laser Crystal by Using a Novel Resonator
YAO Ai-Yun, HOU Wei, LI Hui-Qing, BI Yong, LIN Xue-Chun, GENG Ai-Cong, KONG Yu-Peng, CUI Da-Fu, XU Zu-Yan
Chin. Phys. Lett. 2005, 22 (3):
607-610
.
We report a new way, i.e. double-end-pumping, to extend the stability range of a laser resonator, in advantage of making the thermal loading be effectively divided between the ends of the laser crystal to reduce the thermal effect, thus to extend the stability range. Using this new way, we experimentally obtained a 2.7-W cw laser source at 671nm by intracavity frequency doubling of 1342nm of a Nd:YVO4 laser based on the nonlinear crystal LiB3O5. The maximum pump power is 28W, which is higher than 13W of the single-end-pumping.
|
|
Acoustic Diagnostics of Plasma Channels Induced by Intense Femtosecond Laser Pulses in Air
HAO Zuo-Qiang, YU Jin, ZHANG Jie, LI Yu-Tong, YUAN Xiao-Hui, ZHENG Zhi-Yuan, WANG Peng, WANG Zhao-Hua, LING Wei-Jun, WEI Zhi-Yi
Chin. Phys. Lett. 2005, 22 (3):
636-639
.
Long plasma channels induced by femtosecond laser pulses in air are diagnosed using the sonographic method. By detecting the sound signals along the channels, the length and the electron density of the channels are measured. Refocusing is also observed at different laser energies and different focal lengths. We find that the sonographic method has manifest advantages compared to other techniques.
|
|
Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET
ZHENG Zhong-Shan, LIU Zhong-Li, ZHANG Guo-Qiang, LI Ning, FAN Kai, ZHANG En-Xia, YI Wan-Bing, CHEN Meng, WANG Xi
Chin. Phys. Lett. 2005, 22 (3):
654-656
.
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8×1015, 2×1016, and 1×1017cm-2. The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.
|
|
Nanoscale Inhomogeneities in the Glass Transition of Zr41.2Ti13.8Cu12.5Ni10Be22.5 Bulk Metallic Glass
SUN Min-Hua, WU Zhong-Hua, LIU Guang-Rong, CHEN Xing, CHEN Zhong-Jun
Chin. Phys. Lett. 2005, 22 (3):
664-666
.
By using small-angle x-ray scattering technique, correlation lengths of the density fluctuation are determined for the bulk metallic glass Zr41.2Ti13.8Cu12.5Ni10Be22.5 around the glass transition temperature Tg. Nanoscale inhomogeneities were found to exist in the supercooled liquid and glass state. The correlation length was found to vary with temperature T in an exponential law δ(T)= δ0+A1exp[-(T-T∞)/T1], where T∞ is the Vogel temperature, and parameters δ0, A1 and T1 were simulated to be 16.45nm, 1.88×1029nm, and 9.65K, respectively, in the temperature region from Tg to Tg+80K. The correlation length of the density fluctuation obtained by the small-angle x-ray scattering method can be considered as the characteristic length of glass transition.
|
|
Properties of Excitons Bound to Neutral Donors in GaAs Quantum-Well Wires
LIU Jian-Jun, WANG Xue-Feng
Chin. Phys. Lett. 2005, 22 (3):
678-681
.
In the effective mass approximation, the binding energy of an exciton bound to a neutral donor (D0, X) is calculated variationally for rectangular GaAs quantum-well wires (QWWs) by using a three-parameter wavefunction. The Coulomb interaction terms are treated exactly in their full three-dimensional forms throughout the calculation, especially in the case of (D0, X), which is a more physically realistic procedure than those employed in previous calculations which used effective one-dimensional potential [Chin. Phys. Lett. 21 (2004) 919]. Our treatment is unique in the use of a two-dimensional Fourier expansion of the Coulomb potential, which removes the numerical difficulty with the 1/r singularity and considerably reduces the computational effort. In addition, we also calculate the binding energies of (D0, X) when the donor is in different positions (at the centre, boundary and corner). The average interparticle distances in the square QWWs are discussed.
|
|
Reentrant Spin Glass Behaviour and CE-Type Antiferromagnetic Phase in Half Doping (La,Pr)1,2Ca1/2 MnO3 Manganites
CAO Gui-Xin, ZHANG Jin-Cang, SHA Yan-Na, YAO Kai, CAO Shi-Xun, JING Chao, SHEN Xue-Chu
Chin. Phys. Lett. 2005, 22 (3):
682-685
.
The reentrant spin glass behaviour was observed in half doping (La,Pr)1,2Ca1/2 MnO3 manganites with a CE-type antiferromagnetic structure. It shows sequential multiple magnetic transitions from the paramagnetic to the ferromagnetic, antiferromagnetic, spin glass (SG) transitions, which reflects the complex magnetic interaction in the ground state of manganites. This can be explained by the competition interaction between the ferromagnetic and the CE-type antiferromagnetic matrix, and the disorder due to the tolerance factor t and A-cation size variance σ2. The results reveals the coexistence of ferromagnetic clusters and SG clusters in the background of the antiferromagnetic matrix in the ground state of half doping (La,Pr)1,2Ca1/2 MnO3 systems.
|
|
Spin Glass Behaviour and Spin-Dependent Scattering in La0.7Ca0.3Mn0.9Cr0.1Ox Perovskites
WU Bai-Mei, M. Ausloos, DU Ying-Lei, ZHENG Wei-Hua, LI Bo, J. F. Fagnard, Ph. Vanderbemden
Chin. Phys. Lett. 2005, 22 (3):
686-689
.
The magnetic, electrical and thermal transport properties of the perovskite La0.7Ca0.3Mn0.9Cr0.1Ox have been investigated by measuring dc magnetization, ac susceptibility, the magnetoresistance and thermal conductivity in the temperature range of 5--300K. The spin glass behaviour with a spin freezing temperature of 70K has been well confirmed for this compound, which demonstrates the coexistence and competition between ferromagnetic and antiferromagnetic clusters by the introduction of Cr. Colossal magnetoresistance has been observed over the temperature range investigated. The introduction of Cr causes the ``double-bump'' feature in electrical resistivity ρ(T). Anomalies on the susceptibility and the thermal conductivity associated with the double-bumps in ρ(T) are observed simultaneously. The imaginary part of ac susceptibility shows a sharp peak at the temperature of insulating--metallic transition where the first resistivity bump was observed, but it is a deep-set valley near the temperature where the second bump in ρ(T) emerges. The thermal conductivity shows an increase below the temperature of the insulating--metallic transition, but the phonon scattering is enhanced accompanying the appearance of the second peak of double-bumps in ρ(T). We relate those observed in magnetic and transport properties of La0.7Ca0.3Mn0.9Cr0.1Ox to the spin-dependent scattering. The results reveal that the spin--phonon interaction may be of more significance than the electron (charge)--phonon interaction in the mixed perovskite system.
|
|
Effects of Layer Deposition Sequence on Microstructure and Magnetostatic Coupling of Spin-Valves with Amorphous CoNbZr Layer
WEN Qi-Ye, ZHANG Huai-Wu, JIANG Xiang-Dong, TANG Xiao-Li, ZHONG Zhi-Yong, John Q. Xiao
Chin. Phys. Lett. 2005, 22 (3):
690-693
.
We investigate spin-valve sandwiches with thin amorphous CoNbZr as soft layers. The magnetoresistance (MR), microstructure, and magnetostatic coupling are studied in these sandwiches with different layer deposition sequences. For the CoNbZr/Cu/Co sandwich, the CoNbZr underlayer provides a smoother surface on which smooth Cu and Co layers can subsequently grow. The Cu spacer is dense and pinholes-free, leading to a good ``spin valve'' effect with a larger MR ratio of 3.8%. For the Co/Cu/CoNbZr sandwich, however, the Cu spacer is rough and pinholes were observed, which could induce a direct ferromagnetic coupling. Correlated rougher surfaces on both the sides of the Cu spacer were also observed, giving rise to an ``orangepeel'' coupling of
about 0.105erg/cm-2. This strong ferromagnetic coupling in Co/Cu/CoNbZr results in a lower MR ratio of 1.6%. Moreover, upon proper thermal annealing, the CoNbZr/Cu/Co has a larger MR enhancement and a superior thermal stability to 350°C due to the dense and homogenous structure in the spacer layer.
|
|
Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency
ZHANG Ting, , WANG Yu, LIU Wei-Li, CHENG Jian-Gong, SONG Zhi-Tang, FENG Song-Lin, CHAN-WONG Lai-Wa Helen, CHOY Chung-Loong
Chin. Phys. Lett. 2005, 22 (3):
694-696
.
We report on the fabrication and characterization of a ZnO-based film-bulk acoustic-resonance device utilized as biosensor. The device has a multilayer structure which consists of piezoelectric element (Au/ZnO/Pt) and a Bragg-reflection-layer acoustic isolation consisting of multilayers of ZnO/Pt. Dielectric measurements have revealed that the device has a very high working frequency (up to ~3.1GHz), meaning that the device may have a higher sensitivity than the devices reported in the literature.
|
|
Structural and Electrical Characteristics of Pb(Zr0.53,Ti0.47)O3 Thin Films Deposited on Si (100) Substrates
CHEN Bin, YANG Hao, MIAO Jun, ZHAO Li, XU Bo, DONG Xiao-Li, CAO Li-Xin, QIU Xiang-Gang, ZHAO Bai-Ru
Chin. Phys. Lett. 2005, 22 (3):
697-700
.
Pb(Zr0.53,Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only (110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C--V) and current versus voltage (I--V) measurements. The clockwise trace of the C--V curve shows ferroelectric polarization switching, as is expected. From the I--V curves, the Schottky emission and space-charge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.
|
|
Spectroscopy of the Forming Process of Quantum Dots Accompanied by the Thinning of Wetting Layer
ZHANG Zhen-Zhong, SHEN De-Zhen, ZHANG Ji-Ying, SHAN Chong-Xin, LIU Yi-Chun, LU You-Ming, FAN Xi-Wu
Chin. Phys. Lett. 2005, 22 (3):
708-710
.
A series of Cd0.44Zn0.56Se/ZnSe sandwich structures with different Cd0.44Zn0.56Se embedded layer thicknesses were fabricated by metal organic chemical vapor deposition. When the embedded layer thickness exceeded 3.0nm, the photoluminescence spectra of the sample changed into the two-band structure from the one-band structure, and atomic force microscopy images indicate that Cd0.44Zn0.56Se quantum dots were formed. In the two-band photoluminescence spectrum, the band at the low energy side was attributed to be from quantum dots, and the high-energy one arose from the wetting layer. Thinning of the wetting layer with quantum dots forming was confirmed indirectly by the significant blue shift of the wetting-layer photoluminescence band compared to the photoluminescence band of the samples for which the Cd0.44Zn0.56Se layer thickness was less than 3.0nm. This thinning arose from mass migration during the Stranski--Krastanow growth of Cd0.44Zn0.56Se quantum dots.
|
|
Luminescence Properties of Ca4GdO(BO3)3:RE (RE=Eu3+,Tb3+) under VUV Excitation
DUAN Cheng-Jun, LI Wei-Feng, CHEN Hao-Hong, YANG Xin-Xin, ZHAO Jing-Tai, FU Yi-Bing, ZHANG Guo-Bin, QI Ze-Ming, SHI Zhao-Shu
Chin. Phys. Lett. 2005, 22 (3):
711-714
.
We experimentally investigated the VUV excitation luminescence properties of Ca4GdO(BO3)3:RE (RE=Eu3+,Tb3+). Ca4GdO(BO3)3:Eu3+ and Ca4GdO(BO3)3:Tb3+ emitted bright red and green colour light, respectively, under 172nm excitation, resulting from the favorable position of the host absorption band (186nm) and efficient energy transfer from Gd3+ to activators (e.g. Eu3+ or Tb3+) by means of secondary absorption in the Ca4GdO(BO3)3 matrix. The f--d transitions of Eu3+ and Tb3+ in the host lattice are depicted.
|
|
UV-Blue Upconverted Emission from Nd3+-Doped InF3-Based Heavy-Metal Fluoride Glasses for Blue Upconversion Fibre Laser
ZHANG Qin-Yuan, YANG Gang-Feng, S. Buddhudu, JIANG Zhong-Hong,
Chin. Phys. Lett. 2005, 22 (3):
715-718
.
We report spectral properties and thermal stability of Nd3+-doped InF3-based heavy-metal fluoride glasses. Fluoroindate glasses in the chemical compositions (in mol%) of (38-x)InF3-16BaF2-20ZnF2-20SrF2-3GdF3-1GaF3-2NaF- xNdF3 (x= 0.1, 0.5, 1, 2, 3) have been prepared under a controlled atmosphere in a dry box. Strong UV--blue upconversion emission from a green excitation wavelength has been observed and the involved mechanisms have been explained. Near-infrared emission occurs simultaneously upon excitation of the UV--blue upconversion emissions with a cw Ar+ laser. The upconversion spectra have revealed four dominant emissions at 354, 380, 412 and 449nm, which belong to the transitions of 43/2 → 4I9/2, 4D3/2 → 4I11/2 and 2P3/2 → 4I9/2,4D3/2 → 4I13/2 and 2P3/2 → 4I11/2, 4D3/2 → 4I15/2 and 2P3/2 → 4I13/2, respectively.
|
|
Green-Yellow Electrophosphorescence from di [2,5-diphenyl-1,3,4-oxadiazole C2, N3 Platinum(II) Doped PVK Devices
LIU Jian, ZHU Mei-Xiang, JIANG Chang-Yun, LIU Yu, WU Zhong-Lian, LI Jian-Ren, XING Kong-Qiang, CAO Yong, ZHU Wei-Guo
Chin. Phys. Lett. 2005, 22 (3):
723-726
.
Employing a blend of poly (N-vinylcarbazole) (PVK) and 5-biphenyl-2-(4-tert-butyl)phenyl-1,3,4-oxadiazole) (PBD) as host matrix and a novel bicyclometalated Pt-complex containing 1,3,4-oxadiazole moiety as guest matrix with 2wt.% doping concentration, we have demonstrated efficient phosphorescence-based polymer light-emitting devices (PLEDs). The devices emitted intense green--yellow electrophosphorescence. No emission from either PVK or PBD was observed for the devices. The electroluminescence spectrum exhibited three primary peaks at 525nm, 568nm and 608nm. A maximum external quantum efficiency of 2.3% ph/el and a luminous efficiency of 3.8cd/A were achieved at a current density of 3.4mA/cm2. The results demonstrate that highly efficient electrophosphorescence can be achieved from platinum complex-based polymer light-emitting devices.
|
|
Microstructure of Au Film Prepared by Magnetron Sputtering Deposition
JIANG Yong, GUAN Bo, XU Xiao-Liang,
Chin. Phys. Lett. 2005, 22 (3):
730-732
.
We study the formation of microstructure of gold films that generally undergo three processes: nucleation and nuclear growth, normal grain growth, and abnormal grain growth. Here the grains grow as a column in the normal grain growth process. When the grain size becomes larger than and comparable to the film thickness, the grains with favourable orientation will grow at the expense of the grains with unfavourable orientation, leading to abnormal grain growth. The abnormal grains grow along the favoured orientation (111), which has been certified by x-ray diffraction spectroscopy. Finally, the processes of the normal and abnormal grain growth are fitted using the Lifshitz--Slyozov--Wanger theory.
|
|
Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO2 by In-Situ Fabrication Technique
WU Liang-Cai, CHEN Kun-Ji, YU Lin-Wei, DAI Min, MA Zhong-Yuan, HAN Pei-Gao, LI Wei, HUANG Xin-Fan
Chin. Phys. Lett. 2005, 22 (3):
733-736
.
Structures of nanocrystalline-Si (nc-Si) sandwiched between two asymmetric ultrathin SiO2 layers were fabricated. The nc-Si (dot density of 1011cm-2) was formed by decomposition of hydrogen-diluted silane and the ultrathin SiO2 layers (about 2nm) were prepared by plasma oxidation at a lower temperature (250°C). The whole fabrication processes were completed in situ in a plasma-enhanced chemical vapour deposition system. By using the capacitance--voltage (C--V) and conductance--voltage (G--V) spectroscopy, we studied the electronic properties of the annealed samples. The experimental results show that there are distinct capacitance peaks and conductance plateau or peaks for annealed samples at room temperature, which can be explained by direct tunnelling of electrons into the nc-Si. At the same time, Coulomb blockade plays an important role in the electronic transport in the nc-Si. The effect of thermal annealing in N2 ambient on the electronic properties was studied and the results indicate that high temperature (1000°C) annealing can improve the size uniformity of the nc-Si prepared by decomposition of hydrogen-diluted silane.
|
73 articles
|