| Original Articles |
|
|
|
|
Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency |
| ZHANG Ting1,2,3;WANG Yu1;LIU Wei-Li2;CHENG Jian-Gong2;SONG Zhi-Tang2;FENG Song-Lin2;CHAN-WONG Lai-Wa Helen1;CHOY Chung-Loong1 |
| 1Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong
2Research Centre of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Graduate School of the Chinese Academy of Science, Beijing 100080 |
|
| Cite this article: |
|
ZHANG Ting, WANG Yu, LIU Wei-Li et al 2005 Chin. Phys. Lett. 22 694-696 |
|
|
|
Abstract We report on the fabrication and characterization of a ZnO-based film-bulk acoustic-resonance device utilized as biosensor. The device has a multilayer structure which consists of piezoelectric element (Au/ZnO/Pt) and a Bragg-reflection-layer acoustic isolation consisting of multilayers of ZnO/Pt. Dielectric measurements have revealed that the device has a very high working frequency (up to ～3.1GHz), meaning that the device may have a higher sensitivity than the devices reported in the literature.
|
| Keywords:
77.65.Fs
77.65.Dq
85.50.-n
|
|
|
Published: 01 March 2005
|
|
| PACS: |
77.65.Fs
|
(Electromechanical resonance; quartz resonators)
|
| |
77.65.Dq
|
(Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics)
|
| |
85.50.-n
|
(Dielectric, ferroelectric, and piezoelectric devices)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
