| Original Articles |
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Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer |
| DENG Jia-Jun1;ZHAO Jian-Hua1;JIANG Chun-Ping1;ZHANG Yan2;NIU Zhi-Chuan1;YANG Fu-Hua1;WU Xiao-Guang1;ZHENG Hou-Zhi1 |
| 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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DENG Jia-Jun, ZHAO Jian-Hua, JIANG Chun-Ping et al 2005 Chin. Phys. Lett. 22 466-468 |
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Abstract We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.
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| Keywords:
75.50.Pp
81.15.Hi
81.40.Ef
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Published: 01 February 2005
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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