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Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film |
| LI Xi-Jun1,2;ZHOU YI-Kai3;KIM M.3;KIMURA S.3;TERAGUCHI N.4;EMURA S.3;HASEGAWA S.3;ASAHI H.3 |
| 1College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065
2The Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan |
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| Cite this article: |
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LI Xi-Jun, ZHOU YI-Kai, KIM M. et al 2005 Chin. Phys. Lett. 22 463-465 |
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Abstract Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 10K to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.
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| Keywords:
75.50.Pp
72.20.-i
72.60.+g
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Published: 01 February 2005
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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72.60.+g
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(Mixed conductivity and conductivity transitions)
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