| Original Articles |
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Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD |
| LI Jun-Shuai;YIN Min;WANG Jin-Xiao;HE De-Yan |
| Department of Physics, Lanzhou University, Lanzhou 730000 |
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| Cite this article: |
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LI Jun-Shuai, YIN Min, WANG Jin-Xiao et al 2005 Chin. Phys. Lett. 22 3130-3132 |
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Abstract Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350°C using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density, low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.
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| Keywords:
52.80.Yr
07.20.Mc
72.80.Jc
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Published: 01 December 2005
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| PACS: |
52.80.Yr
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(Discharges for spectral sources)
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07.20.Mc
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(Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)
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72.80.Jc
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(Other crystalline inorganic semiconductors)
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