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High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect |
| SUN Fei;YU Jin-Zhong;CHEN Shao-Wu |
| National Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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SUN Fei, YU Jin-Zhong, CHEN Shao-Wu 2005 Chin. Phys. Lett. 22 3097-3099 |
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Abstract Based on free carrier plasma dispersion effect, a 2×2 optical switch is fabricated in a silicon-on insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach--Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04dB and a response time of 496ns.
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| Keywords:
42.82.Ds
42.82.Et
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Published: 01 December 2005
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| PACS: |
42.82.Ds
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(Interconnects, including holographic interconnects)
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42.82.Et
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(Waveguides, couplers, and arrays)
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