| Original Articles |
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Low-Threshold and High-Power Oxide-Confined 850nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure |
| CHEN Min;GUO Xia;DENG Jun;GAI Hong-Xing;DONG Li-Min;QU Hong-Wei;GUAN Bao-Lu;GAO Guo;SHEN Guang-Di |
| Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022 |
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| Cite this article: |
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CHEN Min, GUO Xia, DENG Jun et al 2005 Chin. Phys. Lett. 22 3074-3076 |
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Abstract The low-threshold and high-power oxide-confined 850nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0.127kA/cm2. For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25mA under the room temperature and pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2nm. The analysis of the characteristics and the fabrication of
VCSELs are also described.
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| Keywords:
42.55.Px
85.60.Jb
85.30.De
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Published: 01 December 2005
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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85.60.Jb
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(Light-emitting devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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