| Original Articles |
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High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers |
| LU Xiu-Zhen;LIU Feng-Qi;LIU Jun-Qi;JIN Peng;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LU Xiu-Zhen, LIU Feng-Qi, LIU Jun-Qi et al 2005 Chin. Phys. Lett. 22 3077-3079 |
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Abstract We develop 5.5-μm InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323K (50°C) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10mW per facet has been measured at 83K.
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| Keywords:
42.55.Px
81.15.Hi
78.66.Fd
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Published: 01 December 2005
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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78.66.Fd
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(III-V semiconductors)
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