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Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction |
| LEI Huan2; LIU Ci-Hui2; LIN Bi-Xia1,2; FU Zhu-Xi1,2 |
| 1Structure Research Laboratory of Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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LEI Huan, LIU Ci-Hui, LIN Bi-Xia et al 2005 Chin. Phys. Lett. 22 185-187 |
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Abstract The capacitance--voltage and current--voltage properties of the samples before and after annealing are investigated at 300K and 195K. It is found that the interface charge plays an important role for the
heterojunction properties. After annealing, the samples exhibit typical junction properties. The heterojunction shows a built-in potential 0.62eV consistent with the theoretical result 0.67eV. However, the sample exhibits more complex behaviour before annealing. The experimental results can be explained by heterojunction theory when introducing interface charge, which suggests that the annealing can reduce interface charge and can improve the junction properties of the samples.
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| Keywords:
71.55.Gs
73.40.Lq
73.20.-r
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Published: 01 January 2005
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| PACS: |
71.55.Gs
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(II-VI semiconductors)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.20.-r
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(Electron states at surfaces and interfaces)
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