Chin. Phys. Lett.  2005, Vol. 22 Issue (1): 182-184    DOI:
Original Articles |
N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability
XIANG Wen-Feng1;LU Hui-Bin1;CHEN Zheng-Hao1;HE Meng1;LU Xu-Bing2,3;LIU Li-Feng1;GUO Hai-Zhong1;ZHOU Yue-Liang1
1Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 2Institute of Microelectronics, Peking University, Beijing 100871 3Digital DNA Laboratories, Motorola Inc., Beijing 100871
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XIANG Wen-Feng, LU Hui-Bin, CHEN Zheng-Hao et al  2005 Chin. Phys. Lett. 22 182-184
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Abstract High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9× 10-6A/cm2, which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900°C for 60s.
Keywords: 68.55.Ln      77.55.+f      77.84.Bw      73.40.Qv     
Published: 01 January 2005
PACS:  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  77.55.+f  
  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I1/0182
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XIANG Wen-Feng
LU Hui-Bin
CHEN Zheng-Hao
HE Meng
LU Xu-Bing
LIU Li-Feng
GUO Hai-Zhong
ZHOU Yue-Liang
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