| Original Articles |
|
|
|
|
Terahertz Radiation from Large Aperture Bulk Semi-insulating GaAs Photoconductive Dipole Antenna |
| SHI Wei1;JIA Wan-Li1;HOU Lei1;XU Jing-Zhou2;ZHANG X-C2 |
| 1Department of Applied Physics, Xi’an University of Technology, Xi’an 710048
2Rensselaer Polytechnic Institute, Troy, NY 12180, USA |
|
| Cite this article: |
|
SHI Wei, JIA Wan-Li, HOU Lei et al 2004 Chin. Phys. Lett. 21 1842-1844 |
|
|
|
Abstract We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3mm between two Au/Ge/Ni electrodes, triggered by 800nm Ti--sapphire laser pulses with 82MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.
|
| Keywords:
84.40.-x
42.65.Re
72.40.+w
|
|
|
Published: 01 September 2004
|
|
| PACS: |
84.40.-x
|
(Radiowave and microwave (including millimeter wave) technology)
|
| |
42.65.Re
|
(Ultrafast processes; optical pulse generation and pulse compression)
|
| |
72.40.+w
|
(Photoconduction and photovoltaic effects)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
