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Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes |
| LI Zhong-Hui1,2,3;YU Tong-Jun2;YANG Zhi-Jian2;TONG Yu-Zhen2;ZHANG Guo-Yi2;FENG Yu-Chun1;GUO Bao-Ping1;NIU Han-Ben1 |
| 1Key Laboratory of Optoelectronic Devices and Systems (Ministry of Education), Institute of Optoelectronics, Shenzhen University, Shenzhen 518060
2State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3School of Materials Engineering, Changchun University of Science and Technology, Changchun 130022
4School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 |
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| Cite this article: |
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LI Zhong-Hui, YU Tong-Jun, YANG Zhi-Jian et al 2004 Chin. Phys. Lett. 21 1845-1847 |
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Abstract An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth temperature and with the increasing trimethylindium flow of the InGaN wells. The electroluminescence peak wavelength of the violet LED are about 401nm with full width at half maximum of 14nm, and the output power in injection current of 20mA at room temperature is 4.1mW.
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| Keywords:
85.60.Jb
85.40.Sz
78.67.De
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Published: 01 September 2004
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