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Properties of Diamond Film/Alumina Composites for Integrated Circuits with Ultra-High Speed and High Power |
| WANG Lin-Jun;XIA Yi-Ben;FANG Zhi-Jun;ZHANG Ming-Long;SHEN Hu-Jiang |
| School of Materials Science and Engineering, Shanghai University, Shanghai 201800 |
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| Cite this article: |
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WANG Lin-Jun, XIA Yi-Ben, FANG Zhi-Jun et al 2004 Chin. Phys. Lett. 21 1161-1163 |
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Abstract We report the properties of the diamond film/alumina composites which were thought of as promising substrate materials for integrated circuits with ultra-high speed and high power. The measurement results of dielectric properties of diamond film/alumina composites show that the coating of CVD diamond films could effectively reduce the dielectric constant of the composite. Carbon ion implantation into alumina substrates prior to the diamond deposition can reduce the dielectric loss of the composite from 5 x 10-3 to 2 x 10-3, and can give the composite better frequency stability. The thermal conductivity of composites could be obviously increased by coating CVD diamond film. The composite has a dielectric constant of 6.5 and a thermal conductivity of 3.98 W/(cmK) when the thickness of diamond film is up to 100 μm.
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| Keywords:
81.05.Je
81.05.Uw
77.22.-d
68.60.Dv
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Published: 01 June 2004
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| PACS: |
81.05.Je
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(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
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81.05.Uw
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77.22.-d
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(Dielectric properties of solids and liquids)
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68.60.Dv
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(Thermal stability; thermal effects)
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