|
A Spatiotemporal-Chaos-Based Cryptosystem Taking Advantage of Both Synchronous and Self-Synchronizing Schemes
LÜ, Hua-Ping, WANG Shi-Hong, LI Xiao-Wen, TANG Guo-Ning, KUANG Jin-Yu, YE Wei-Ping, HU Gang,
Chin. Phys. Lett. 2004, 21 (6):
1016-1019
.
Two-dimensional one-way coupled map lattices are used for cryptography where multiple space units produce chaotic outputs in parallel. One of the outputs plays the role of driving for synchronization of the decryption system while the others perform the function of information encoding. With this separation of functions the receiver can establish a self-checking and self-correction mechanism, and enjoys the advantages of both synchronous and self-synchronizing schemes. A comparison between the present system with the system of advanced encryption standard (AES) is presented in the aspect of channel noise influence. Numerical investigations show that our system is much stronger than AES against channel noise perturbations, and thus can be better used for secure communications with large channel noise.
|
|
Structure of the πg7/2 [404] 7/2+ Band in Odd Proton Nucleus 123I
WANG Shou-Yu, MA Ying-Jun, T. Komatsubara, LIU Yun-Zuo, ZHANG Yu-Hu, K. Furuno, T. Hayakawa, J. Mukai, Y. Iwata, T. Morikawa, G. B. Hagemann, G. Sletten, J. Nyberg, D. Jerrestam, H. J. Jensen, J. Espino, J. Gascon, N. GjФrup, B. Cederwall, P. O. TjФm
Chin. Phys. Lett. 2004, 21 (6):
1024-1026
.
High spin states of the odd proton nucleus 123I have been populated in the reaction 116Cd(14N, 5n2p) at a beam energy of 65 MeV. Two previously known positive-parity ΔI = 2 sequences have been extended up to 31/2+ and 41/2+. In addition, a number of ΔI = 1 transitions linking the two ΔI = 2 sequences have been observed. It is suggested that both the ΔI = 2 sequences are built upon the oblate πg7/2[404]7/2+ Nilsson configuration.
|
|
Silica-Based Arrayed Waveguide Grating with Flattened Spectral Response Using a Multimode Interference Coupler
TANG Yan-Zhe, JIA Ke-Miao, LI Bai-Yang, YANG Jian-Yi, JIANG Xiao-Qing, WU Ya-Ming, WANG Yue-Lin,
Chin. Phys. Lett. 2004, 21 (6):
1064-1066
.
We designed and fabricated an arrayed waveguide grating based on silica-on-silicon materials with flattened spectral response by adding a multimode interference coupler in the input region. The theoretical analysis and calculation are given. The device has worked effectively and has been tested with the passband 0.43 nm at 1 dB, 0.72 nm at 3 dB and 1.56 nm at 20 dB respectively, at a cost of power penalty of about 1.5 dB. The crosstalk is less than -30 dB, owing to the high-resolution photomask and well-controlled fabrication processes.
|
|
A 115-W Ytterbium-Doped Fibre Laser
ZHOU Jun, LOU Qi-Hong, KONG Ling-Feng, WU Zhong-Lin, XUE Dong, DONG Jing-Xing, WEI Yun-Rong, YE Zhen-Huan,
ZHU Jian-Qiang, WANG Zhi-Jiang
Chin. Phys. Lett. 2004, 21 (6):
1083-1085
.
We report a highly efficient ytterbium-doped double-clad fibre laser, one-end pumped by a 975-nm diode stack source and generating up to 115.6 W of cw output power at 1.1 μm. The maximum optical-to-optical conversion efficiency with respect to the launched pump power is 79% at 65-W output power, and the overall slope efficiency is about 69%.
|
|
Modulation Instability in Biased Photorefractive-Photovoltaic Crystals
LU Ke-Qing, ZHAO Wei, YANG Yan-Long, SUN Chuan-Dong, GAO Hong-Wen, LI Jin-Ping, ZHANG Yan-Peng
Chin. Phys. Lett. 2004, 21 (6):
1086-1088
.
We show the modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions. This modulation instability growth rate depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam intensity to that of the dark irradiance. Under appropriate conditions, this modulation instability growth rate is the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals, and the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals can be predicted.
|
|
A Broadband Geoacoustic Inversion Scheme
LI Zheng-Lin, ZHANG Ren-He
Chin. Phys. Lett. 2004, 21 (6):
1100-1103
.
A geoacoustic inversion scheme, which combines several inversion methods together to invert for the bottom parameters, has been proposed based on the fact that the bottom acoustic parameters have different sensitivities to the different physical parameters of acoustic field. Firstly, the characteristic impedance of the bottom is inverted by measuring the vertical bottom reflective coefficients. Secondly, the derived bottom characteristic impedance is used as a constrained condition in another inversion procedure, which is very sensitive to the bottom sound speed but less sensitive to the attenuation, to inverse the bottom sound speed and bottom density. Lastly, the bottom attenuation can be estimated from methods such as transmission loss data, the vertical correlation of propagation data, and the normal mode attenuation. To obtain the characteristic impedance of the bottom accurately, vacuum glass spheres (VGS) are used as broadband sound sources, and a special mechanism is designed to trigger the VGS imploded at the preset depth. The inversion scheme has been successfully used for a set of sea experimental data. It shows that the inverted bottom parameters could distinguish the atlas marked bottom type quite well. The excellent comparison of the numerical results with the experimental data shows the validity of the inverted parameters.
|
|
Shadow Effect and Its Revisal in Grid-Enhanced Plasma Source with Ion Implantation Method
ZHANG Gu-Ling, WANG Jiu-Li, LIU Yuan-Fu, LI Xue-Ming, WU Xing-Fang, FAN Song-Hua, LIU Chi-Zi, YANG Si-Ze
Chin. Phys. Lett. 2004, 21 (6):
1114-1116
.
The implanting voltage, gas pressure and the grid electrode radius are the key parameters influencing the surface grid shadow effect that has been observed in our grid-enhanced plasma source ion implantation experiment. To reduce the shadow effect and obtain a corresponding better implantation uniformity of sample surfaces, we need to use lower implanting voltage, higher gas pressure and smaller grid radius. Furthermore, we apply an axial magnetic field to increase the plasma density inside the tube and to mix the plasma outside the grid, so that the shadow effect of sample surfaces can be weakened.
|
|
Investigation of Microstructures of AlAs Oxides Before and After Oxidation
WANG Yong, JIA Hai-Qiang, MAI Zhen-Hong, JIA Quan-Jie, JIANG Xiao-Ming
Chin. Phys. Lett. 2004, 21 (6):
1128-1130
.
The effect of lateral oxidation on microstructures of the GaAs/AlAs/GaAs heterostructure was studied by x-ray specular reflectivity, nonspecular scattering and diffraction. The GaAs/Al2O3/GaAs multilayer was obtained after oxidation of the GaAs/AlAs/GaAs sample. The results show that, before oxidation, there are two 40-Å-thick intermixing layers, one located between the AlAs sublayer and the GaAs substrate, and the other between the AlAs sublayer and the upper GaAs sublayer. After oxidation, these two intermixing sublayers disappear. The AlAs was oxidized into amorphous Al2O3 totally. The surface and interface roughnesses of the sample also decrease after oxidation.
|
|
Structural and Electrical Properties of Barium Strontium Titanate Thin Film on Conductive La1-xSrxMnO3 Bottom Layer
MIAO Jun, CHEN Wei-Ran, CHEN Bin, YANG Hao, PENG Wei, ZHONG Jian-Pin, WU Hao, YUAN Jie, XU Bo, QIU Xiang-Gang, CAO Li-Xin, ZHAO Bai-Ru
Chin. Phys. Lett. 2004, 21 (6):
1139-1142
.
Ferroelectrics and colossal magnetoresistance heterostructure Ba1-xSrxTiO3(BST)/La1-xSrxMnO3 (LSMO) have been fabricated on a LaAlO3 substrate by the pulse laser deposition method. The dielectric measurements show that at room temperature and 100 kHz, the dielectric constant and loss tangent are about 990 and 0.012, respectively; the highest tunability is about 45 % near 200 K under the applied electric field of 200 kV/cm. Further study indicates that the leakage current for the BST/LSMO heterostructure obeys the Schottky emission mechanism in the electric field region higher than 100 kV/cm at room temperature.
|
|
Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films
LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy
Chin. Phys. Lett. 2004, 21 (6):
1143-1146
.
The effect of annealing temperature on crystallization of amorphous Ge2Sb2Te5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge2Sb2Te5 film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as the annealing temperature increases. When the annealing temperature is too high, voids are formed, which may originate from evaporation of the Ge2Sb2Te5 film at the elevated temperatures, formation of sink, being nucleated by residual vacancies, and surface roughness. The resistivity of the Ge2Sb2Te5 film decreases with the increasing annealing temperature and has slight changes when the temperature is higher than 400°C. Phase transitions and scattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge2Sb2Te5 film.
|
|
Observation of Photovoltaic Effects in Bright Red Organic Electroluminescent Diodes Doped with Red Dopant
WEI Han-Zhi, LI Wen-Lian, WANG Dong-Yue, CHU Bei, LI Ming-Tao, ZHANG Zhi-Qiang, HU Zhi-Zhi
Chin. Phys. Lett. 2004, 21 (6):
1153-1156
.
Photovoltaic (PV) effects for red bright organic light-emitting diodes (OLEDs) in which the red light emitted from the dopant 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) have been observed. The OLEDs show organic photovoltaic properties. At the optimum doping concentration, the main eletroluminescence parameters including the maximum brightness and the maximum luminous efficiency under current density of 20 mA/cm2 are 3280 cd/m2 and 1.54 cd/A, respectively. When irradiated by a 365-nm UV-light (4 mW/cm2), the device exhibits the PV parameters of the open-circuit voltage 1.4 V, short-circuit current 2.9 μA/cm2, fill factor 0.22, and power conversion efficiency 0.022%. Effects of every organic layer, especially the doped DCJTB on the PV performance, are also discussed. It is expected that the research for the PV property of the small molecular doping OLEDs will be of benefit for flat panel display technology in the future.
|
|
Nd3+, Yb3+ and Ho3+ Codoped Oxyfluoride Glass Ceramics with High Efficient Green Upconversion Luminescence
ZHANG Jun-Jie, KAWAMOTO Yoji, DAI Shi-Xun, ZHANG Li-Yan, HU Li-Li
Chin. Phys. Lett. 2004, 21 (6):
1164-1167
.
New oxyfluoride glasses and glass ceramic codoped with Nd3+, Yb3+ and Ho3+ were prepared. The x-ray diffraction analysis revealed that the heat treatments of the oxyfluoride glasses could cause the precipitation of (Nd3+, Yb3+, Ho3+)-doped fluorite-type crystals. Very strong green up-conversion luminescence due to the Ho3+: (5F4, 5S2) → 5I8 transition under 800-nm excitation was observed in these transparent glass ceramics. The intensity of the green up-conversion luminescence in a 1-mol% YbF3-containing glass ceramic was found to be about 120 times stronger than that in the precursor oxyfluoride glass. The reason for the highly efficient Ho3+ up-conversion luminescence in the oxyfluoride glass ceramics is discussed.
|
|
Fast Growth of Polycrystalline Film in SiCl4/H2 Plasma
HUANG Rui, LIN Xuan-Ying, YU Yun-Peng, LIN Kui-Xun, WEI Jun-Hong, YU Chu-Ying, WANG Zhao-Kui
Chin. Phys. Lett. 2004, 21 (6):
1168-1170
.
We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300°C from SiCl4/H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2/SiCl4, but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio of H2/SiCl4. The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4/H2 plasma. By means of adjusting the matching relation between the flow ratio of H2/SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5Å/s, with a crystalline fraction of 75% and an average crystallite size of 400-500 nm in diameter.
|
|
Effect of Ballistic-Type Hot Atom Adsorption Mechanism on the Phase Diagram of Monomer-Dimer CO-O2 Surface Catalytic Reaction: A Monte Carlo Simulation
M. Khalid, K. M. Khan, A. U. Qaisrani, Q. N. Malik
Chin. Phys. Lett. 2004, 21 (6):
1171-1174
.
We investigate the effect of the ballistic mechanism on the phase diagram using a square surface. While using this mechanism whenever an O2 molecule hits a randomly vacant selected site, the molecule breaks up into atomic form and then executes a ballistic flight. The paths of the two oxygen atoms are taken exactly to be opposite to each other, i.e. anti-parallel, and the ranges of the atoms are taken to be equal, i.e.~they may fly up to 1 or 1.414 or 2 of the atomic spacing from the site of impact. Four cases have been studied on the basis of the range of hot atoms. The range of the hot oxygen atoms executing a ballistic flight might be up to the first nearest neighbourhood (1 atomic spacing from the site of impact), the second nearest neighbourhood (1.414 atomic spacing from the site of impact), the third nearest neighbourhood (2 atomic spacing from the site of impact), known as cases a, b, and c, respectively, while for case d the range of the oxygen atoms executing the ballistic flight might be up to 1 atomic spacing or 1.414 atomic spacing or 2 atomic spacing from the site of impact. The steady reactive window is observed and the continuous transition disappears. As soon as the CO partial pressure departs from zero, the production of CO2 is observed, which clearly verifies the experimental observation.
|
58 articles
|