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Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films |
| LIU Bo1;SONG Zhi-Tang1;FENG Song-Lin1;CHEN Bomy2 |
| 1Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| Cite this article: |
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LIU Bo, SONG Zhi-Tang, FENG Song-Lin et al 2004 Chin. Phys. Lett. 21 1143-1146 |
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Abstract The effect of annealing temperature on crystallization of amorphous Ge2Sb2Te5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge2Sb2Te5 film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as the annealing temperature increases. When the annealing temperature is too high, voids are formed, which may originate from evaporation of the Ge2Sb2Te5 film at the elevated temperatures, formation of sink, being nucleated by residual vacancies, and surface roughness. The resistivity of the Ge2Sb2Te5 film decreases with the increasing annealing temperature and has slight changes when the temperature is higher than 400°C. Phase transitions and scattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge2Sb2Te5 film.
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| Keywords:
77.84.Bw
81.30.Hd
68.37.Lp
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Published: 01 June 2004
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| PACS: |
77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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81.30.Hd
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(Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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