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Modulation Instability in Biased Photorefractive-Photovoltaic Crystals |
| LU Ke-Qing1;ZHAO Wei1;YANG Yan-Long1;SUN Chuan-Dong1;GAO Hong-Wen1;LI Jin-Ping1;ZHANG Yan-Peng2 |
| 1State Key Laboratory of Transient Optics Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academic of Sciences, Xi’an 710068
2Department of Electronic Science and Technology, Xi’an Jiaotong University, Xi’an 710049 |
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| Cite this article: |
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LU Ke-Qing, ZHAO Wei, YANG Yan-Long et al 2004 Chin. Phys. Lett. 21 1086-1088 |
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Abstract We show the modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions. This modulation instability growth rate depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam intensity to that of the dark irradiance. Under appropriate conditions, this modulation instability growth rate is the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals, and the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals can be predicted.
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| Keywords:
42.65.Hw
42.65.Jx
42.65.Tg
72.40.+w
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Published: 01 June 2004
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| PACS: |
42.65.Hw
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(Phase conjugation; photorefractive and Kerr effects)
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42.65.Jx
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(Beam trapping, self-focusing and defocusing; self-phase modulation)
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42.65.Tg
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(Optical solitons; nonlinear guided waves)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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