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Field Emission Characteristics of BN Films with Cubic-BN Phase |
| GU Guang-Rui1;WU Bao-Jia1;JIN Zhe1;SUN Long1;LI Jun-Jie1;ZHAO Yong-Nian2;WANG Bo3;YAN Hui3;WANG Wei-Biao4 |
| 1Department of Physics, College of Science and Engineering, Yanbian University, Yanji 133002
2National Laboratory for Superhard Materials, Jilin University, Changchun 130012
3Key Laboratory of Advanced Function Materials (Ministry of Education), Beijing Polytechnic University, Beijing 100022
4Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 |
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| Cite this article: |
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GU Guang-Rui, WU Bao-Jia, JIN Zhe et al 2004 Chin. Phys. Lett. 21 565-567 |
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Abstract Boron nitride (BN) thin films with cubic boron nitride (c-BN) phase were prepared on the (100)-oriented surface of n-Si (0.008-0.02Ωm) by rf magnetron sputtering physical vapour deposition. The c-BN content is determined to be around 50% by using Fourier transform infrared spectroscopy for the BN thin films. The field emission characteristics of BN films were measured in an ultrahigh vacuum system. It is found that the field emission of the BN film with c-BN phase is evidently more excellent than that without c-BN phase. A turn-on field of 5 V/μm and a current of 460μA/cm2 were obtained for the BN film with c-BN phase. The Fowler-Nordheim plots of emission characteristics of BN films indicate a straight line, which suggests the presence of the FN tunnelling.
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79.70.+q
81.15.Cd
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Published: 01 March 2004
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.15.Cd
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(Deposition by sputtering)
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