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Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters |
DING Fu-Rong;SHI Ping;HE Wei-Hong;WANG Yao; NIE Rui;SHEN Ding-Yu; MA Hong-Ji |
Department of Technical Physics, Peking University, Beijing 100871 |
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Cite this article: |
DING Fu-Rong, SHI Ping, HE Wei-Hong et al 2004 Chin. Phys. Lett. 21 562-564 |
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Abstract The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.
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Keywords:
79.20.Rf
61.80.Lj
34.50.Dy
36.40.-c
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Published: 01 March 2004
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PACS: |
79.20.Rf
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(Atomic, molecular, and ion beam impact and interactions with surfaces)
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61.80.Lj
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(Atom and molecule irradiation effects)
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34.50.Dy
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36.40.-c
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(Atomic and molecular clusters)
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