| Original Articles |
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Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam
Epitaxy with a GaP Decomposition Source |
| SHANG Xun-Zhong;NIU Ping-Juan;WU Shu-Dong;WANG Wen-Xin;GUO Li-Wei;HUANG Qi;ZHOU Jun-Ming |
| Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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| Cite this article: |
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SHANG Xun-Zhong, NIU Ping-Juan, WU Shu-Dong et al 2003 Chin. Phys. Lett. 20 1616-1618 |
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Abstract Lattice-matched InGaP on GaAs (001) was successfully grown by solid-source molecular beam epitaxy with a GaP decomposition source. A 0.5-μm-thick InGaP epilayer shows photoluminescence peak energy as large as 1.991 eV at 15 K, the full width at half maximum as small as 9.4 meV and x-ray diffraction rocking curve linewidth as narrow as 25 arcsec. The electron mobilities of undoped and Si-doped InGaP layers obtained by Hall measurements are comparable to similar InGaP/GaAs heterojunction grown by solid-source molecular beam epitaxy with other sources or other growth techniques. The results reveal that the InGaP/GaAs heterojunction grown by the present growth way have great potential applications for semiconductor devices.
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| Keywords:
81.15.Hi
61.10.Nz
78.55.Cr
73.50.Ey
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Published: 01 September 2003
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