Deposition of Er:Al<suB>2</suB>O<suB>3</suB> Films and Photoluminescence Characteristics

Chin. Phys. Lett.

2003, Vol. 20

Issue (9): 1613-1615 DOI:

Original Articles

Deposition of Er:Al₂O₃ Films and Photoluminescence Characteristics

LI Cheng-Ren^1,2;SONG Chang-Lie²;LI Shu-Feng²;RAO Wen-Xiong²

¹Department of Physics, Liaoning Normal University, Dalian 116029 ²Department of Physics, Dalian University of Technology, Dalian 116024

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LI Cheng-Ren, SONG Chang-Lie, LI Shu-Feng et al 2003 Chin. Phys. Lett. 20 1613-1615

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Abstract Er³⁺-doped Al₂O₃ films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering. The process parameters, such as target bias voltage, substrate bias voltage, O₂ gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er³⁺ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.

Keywords: 81.15.Cd 78.20.-e

Published: 01 September 2003

PACS:	81.15.Cd	(Deposition by sputtering)
	78.20.-e	(Optical properties of bulk materials and thin films)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I9/01613

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	LI Cheng-Ren
	SONG Chang-Lie
	LI Shu-Feng
	RAO Wen-Xiong

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