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Photon-Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot-Quantum Well Hybrid Structure |
| BIAN Song-Bao1;TANG Yan1;LI Gui-Rong1;LI Yue-Xia1;YANG Fu-Hua1;ZHENG Hou-Zhi1;ZENG Yi-Ping2 |
| 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Novel Material Department, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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BIAN Song-Bao, TANG Yan, LI Gui-Rong et al 2003 Chin. Phys. Lett. 20 1362-1365 |
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Abstract We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100 ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.
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| Keywords:
78.66.Fd
85.35.Be
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Published: 01 August 2003
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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