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Thermal Annealing of SiO2 Fabricated by Flame Hydrolysis Deposition |
| ZHANG Le-Tian;XIE Wen-Fa;WU Yuan-Da;XING Hua;LI Ai-Wu;ZHENG Wei;ZHANG Yu-Shu |
| National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023 |
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| Cite this article: |
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ZHANG Le-Tian, XIE Wen-Fa, WU Yuan-Da et al 2003 Chin. Phys. Lett. 20 1366-1368 |
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Abstract Amorphous SiO2 films were fabricated on Si substrates by flame hydrolysis deposition as buffer layers applied in the planar optical waveguides. Then the Si wafers with the porous particles were put into electric furnace annealing at different temperatures for consolidation in air. The products were characterized by x-ray diffraction, x-ray
photoelectron spectroscopy, atomic force microscopy, and variable angle spectroscopic ellipsometry. It was found that different structures at different annealing temperatures were obtained. When the annealing temperature arrives at 1400°C, SiO2 is continuous and dense and the refractive index at 1550 nm is 1.4564, which is highly desirable.
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| Keywords:
78.66.Jg
78.20.Ci
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Published: 01 August 2003
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| PACS: |
78.66.Jg
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(Amorphous semiconductors; glasses)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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