| Original Articles |
|
|
|
|
An a-C:F:H Film with High Thermal Stability by Electron Cyclotron Resonance Chemical Vapor Deposition at Room Temperature |
| XIN Yu1;XU Sheng-Hua1;NING Zhao-Yuan1;LU Xin-Hua2;JIANG Mei-Fu1;HUANG Song1;DU Wei1;CHEN Jun1;YE Chao1;CHENG Shan-Hua1 |
| 1Department of Physics, Suzhou University, Suzhou 215006
2Center for Analyzing and Testing, Suzhou University, Suzhou 215006
|
|
| Cite this article: |
|
XIN Yu, XU Sheng-Hua, NING Zhao-Yuan et al 2003 Chin. Phys. Lett. 20 423-426 |
|
|
|
Abstract Using CHF3/C6H6 gases, amorphous fluorinated hydrocarbon films (a-C:F:H) were deposited by electron cyclotron resonance (ECR) chemical vapor deposition at room temperature. Dependence of the film properties on variable flow ratios R[CHF3]/{[CHF3]+[C6H6]} was investigated by infrared absorption, x-ray photoelectron spectroscopy, measurements of the film thickness and dielectric constant. Evidences show that the film deposition rate decreases linearly with the increasing flow ratios R and the adding of C6H6 source gas to ECR plasma enhances structural cross-linking in the a-C:F:H films. In order to obtain good structural stability of these films, it is necessary to reconcile configurations between C-C bond and H or F terminal atoms carefully. The experimental results indicate that an a-C:F:H film with low dielectric constant (k < 3) and high thermal stability ( > 400°C) has been deposited successfully at R = 56.3%.
|
| Keywords:
81.15.Gh
78.30.-j
82.80.Pv
|
|
|
Published: 01 March 2003
|
|
| PACS: |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
78.30.-j
|
(Infrared and Raman spectra)
|
| |
82.80.Pv
|
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
