A New Kind of Buffer Layer of TiO<suB>2</suB> Self-Assembled Material in Organic Electroluminescent Devices

Chin. Phys. Lett.

2003, Vol. 20

Issue (3): 420-422 DOI:

Original Articles

A New Kind of Buffer Layer of TiO₂ Self-Assembled Material in Organic Electroluminescent Devices

BAI Feng¹;DENG Zhen-Bo¹;ZHANG Meng-Xin¹;ZOU Wei-Yan²;CAI Qiang²

¹Institute of Optoelectronics Technology, Northern Jiaotong University, Beijing 100044 ²Department of Material, Tsinghua University, Beijing 100084

Cite this article:

BAI Feng, DENG Zhen-Bo, ZHANG Meng-Xin et al 2003 Chin. Phys. Lett. 20 420-422

Download: PDF(353KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract A new kind of TiO₂ self-assembled nanometer material has been fabricated and is used as a hole-injecting buffer layer in organic electroluminescent devices. The luminance and the efficiency of a device individually rises from 1500 cd/m² to 5000 cd/m² and from 2.0 cd/A to 3.92 cd/A at the current density of 100 mA/cm². The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode.

Keywords: 78.60.Fi 85.60.Jb

Published: 01 March 2003

PACS:	78.60.Fi	(Electroluminescence)
	85.60.Jb	(Light-emitting devices)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I3/0420

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	BAI Feng
	DENG Zhen-Bo
	ZHANG Meng-Xin
	ZOU Wei-Yan
	CAI Qiang

Related articles from Frontiers Journals

[1]	ZENG Chang, ZHANG Shu-Ming, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN**[J]. Chin. Phys. Lett., 2012, 29(1): 420-422
[2]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 420-422
[3]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 420-422
[4]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 420-422
[5]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 420-422
[6]	CHEN Jun, FAN Guang-Han, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer**[J]. Chin. Phys. Lett., 2011, 28(12): 420-422
[7]	WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED**[J]. Chin. Phys. Lett., 2011, 28(11): 420-422
[8]	FENG Lie-Feng, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(10): 420-422
[9]	LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 420-422
[10]	DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 420-422
[11]	QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 420-422
[12]	WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 420-422
[13]	LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan. Electroluminescence from Multilayered Diamond/CeF₃/SiO₂ Films[J]. Chin. Phys. Lett., 2010, 27(4): 420-422
[14]	PAN Yao-Bo, HAO Mao-Sheng, QI Sheng-Li, FANG Hao, ZHANG Guo-Yi. Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes[J]. Chin. Phys. Lett., 2010, 27(3): 420-422
[15]	ZHANG Li-Li, HU Chun-Lian, WANG Can, LÜ, Hui-Bin, HAN Peng, YANG Guo-Zhen, JIN Kui-Juan. Competition between Radiative Power and Dissipation Power in the Refrigeration Process in Oxide Multifilms[J]. Chin. Phys. Lett., 2010, 27(2): 420-422

Viewed

Full text

Abstract