Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

Chin. Phys. Lett.

2003, Vol. 20

Issue (11): 2061-2063 DOI:

Original Articles

Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

FANG Zhi-Dan;GONG Zheng;MIAO Zhen-Hua;XU Xiao-Hua;NI Hai-Qiao;NIU Zhi-Chuan

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

FANG Zhi-Dan, GONG Zheng, MIAO Zhen-Hua et al 2003 Chin. Phys. Lett. 20 2061-2063

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Abstract Self-assembled InAs/GaAs quantum dots covered by the 1-nm In_xAl_1-xAs (x = 0.2,0.3) and 3-nm In_0.2Ga_0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long wavelength of 1.33 μm and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, the comparative study proves that the energy separation can increase to 91 meV by multiple stacking.

Keywords: 81.15.Hi 85.30.Vw 78.55.Mb

Published: 01 November 2003

PACS:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	85.30.Vw
	78.55.Mb	(Porous materials)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I11/02061

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	FANG Zhi-Dan
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	NI Hai-Qiao
	NIU Zhi-Chuan

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