| Original Articles |
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Low-Temperature Growth of Polycrystalline Silicon Films by
SiCl4/H2 rf Plasma Enhanced Chemical Vapor Deposition
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| LIN Xuan-Ying;HUANG Chuang-Jun;LIN Kui-Xun;YU Yun-Peng;YU Chu-Ying;CHI Ling-Fei |
| Department of Physics, Shantou University, Shantou 515063 |
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| Cite this article: |
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LIN Xuan-Ying, HUANG Chuang-Jun, LIN Kui-Xun et al 2003 Chin. Phys. Lett. 20 1879-1882 |
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Abstract Polycrystalline silicon film was directly fabricated at 200°C by the conventional plasma enhanced chemical vapor deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power. The maximum crystallinity and the crystalline grain size are over 80% and 200-500 nm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical etching, in-situ chemical cleaning, and the detachment of bonded H.
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| Keywords:
81.15.Gh
81.10.Jt
68.55.Nq
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Published: 01 October 2003
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.10.Jt
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(Growth from solid phases (including multiphase diffusion and recrystallization))
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68.55.Nq
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(Composition and phase identification)
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