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Photoluminescence of ZnSe-ZnS Single Quantum Wells Grown by Vapor Phase Epitaxy |
| LÜ You-Ming1;SHEN De-Zhen1;LIU Yi-Chun1;LI Bing-Hui1;ZHANG Ji-Ying1;FAN Xi-Wu1;S.Iida2;A. Kato2 |
| 1Laboratory of Excited State Processes of Chinese Academy of Sciences, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021
2Nagaoga University of Technology, Kamitomioka 1603-1, Nagaoka, 940-2188 Japan
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| Cite this article: |
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LÜ, You-Ming, SHEN De-Zhen et al 2002 Chin. Phys. Lett. 19 131-133 |
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Abstract We study the photoluminescence (PL) of ultra thin layer ZnSe quantum wells in ZnS barriers. Samples with different well widths are grown by vapor phase epitaxy and the PL spectra of these samples are measured by the excitation of a 500 W Hg lamp. The peak positions of the bands coming from the excitonic luminescence show a larger blue shift with respect to the energy of free excitons in the ZnSe bulk material. The observed variation of the full width at half maximum and peak position of the bands in the spectra with the well width are interpreted to formation of the ZnSxSe1-x alloy layer due to the interdiffusion in the interfaces between ZnSe and ZnS. According to the behaviour of the excitons in the smaller conduction band offset, the exciton binding energy is estimated from the dependence of the PL intensity on the temperature. From this result, excitons seem to show nearly three-dimensional characteristics.
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78.55.-m
78.20.-e
78.66.-w
85.30.Vw
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Published: 01 January 2002
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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78.66.-w
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(Optical properties of specific thin films)
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85.30.Vw
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