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Electrical Properties of ZnO/Si Heterostructure |
| LIU Ci-Hui1,2;CHEN Yu-Lin3;LIN Bi-Xia1,2;ZHU Jun-Jie1;FU Zhu-Xi1,2;PENG Cong2;YANG Zhen2 |
| 1Structure Research Laboratory, Chinese Academy of Sciences
2Department of Physics, University of Science and Technology of China, Hefei 230026 (mailing address)
3Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia et al 2001 Chin. Phys. Lett. 18 1108-1110 |
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Abstract The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I-V, I-T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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| Keywords:
71.55.Gs
73.40.Lq
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Published: 01 August 2001
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| PACS: |
71.55.Gs
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(II-VI semiconductors)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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