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The πh11/2 Band-Crossing and Possible Octupole
Correlations in 122Ba
ZHU Sheng-Jiang, M. Sakhaee, YANG Li-Ming, GAN Cui-Yun, ZHU Ling-Yan, XU Rui-Qing, JIANG Zhuo, ZHANG Zheng, LONG Gui-Lu, WEN Shu-Xian, WU Xiao-Guang
Chin. Phys. Lett. 2001, 18 (8):
1027-1029
.
High-spin states in 122Ba have been investigated in the 107Ag(19F, 4n) reaction by in-beam γ-ray spectroscopic methods. The ground-state band has been observed with spin up to 20ħ and a negative-parity band is identified with spin state up to 19ħ. A band-crossing in the yrast band is observed at a rotational frequency of ħω ≈ 0.36 MeV and, in accordance with cranked shell model calculations, is interpreted as arising from the alignment of two h11/2 protons. Strong E1 transitions between the negative-parity and the yrast bands have been observed, which are proposed as possible evidence for octupole correlations.
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Measurements of Total Reaction Cross Sections for Exotic Nuclei
Close to the Proton Drip-line at Intermediate Energies and Observation of a Proton Halo in 27P
FANG De-Qing, SHEN Wen-Qing, FENG Jun, CAI Xiang-Zhou, MA Yu-Gang, ZHANG Hu-Yong, ZHONG Chen, ZHAN Wen-Long, GUO Zhong-Yan, XIAO Guo-Qing, WANG Jian-Song, WANG Jin-Chuan, LI Jia-Xing, WANG Meng, WANG Jian-Feng, NING Zhen-Jiang, WANG Quan-Jin, CHEN Zhi-Qiang
Chin. Phys. Lett. 2001, 18 (8):
1033-1036
.
Measurements of total reaction cross sections (σR) for some proton-rich nuclei (N = 11-15 isotones) on carbon target at intermediate energies have been performed on the Radioactive Ion Beam Line of the Heavy Ion Research Facility in Lanzhou. A large enhancement of σR for 27P has been observed than for its neighbors. Evidence for a proton halo in 27P has been revealed in the Glauber analysis of the total reaction cross sections in terms of the difference factor d.
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Experimental Probe to the Isospin-Dependent Properties of Hot
Nuclei in Reactions 40Ar+112,124Sn at 30 MeV/u
XIAO Zhi-Gang, JIN Gen-Ming, WU He-Yu, WEI Zhi-Yong, WANG Hong-Wei, DUAN Li-Min, LIU Yong-Ying, LI Zu-Yu, ZHANG Bao-Guo, ZHU Yong-Tai, WANG Su-Fang, LU Zhao-Hui, ZHU Hai-Dong, HU Rong-Jiang
Chin. Phys. Lett. 2001, 18 (8):
1037-1039
.
Protons are emitted much more affluently in neutron-deficient system 40Ar+112Sn while triton emissions are greater in a neutron-rich system 40Ar+124Sn at incident energy of 30 MeV/u. Similar to neutron, proton emission provied a dominant contribution to neutralize the system N/Z in the decay process of the hot nuclei. The emission of hydrogen isotopes with high energies is much enhanced in the 112Sn system. The original temperature of the hot nuclei in the 40Ar+112Sn reaction is 5.8±0.3 MeV, about 0.7 MeV higher than 5.1±0.3 MeV as in the 40Ar+124Sn reaction.
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Electrical Properties of ZnO/Si Heterostructure
LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia, ZHU Jun-Jie, FU Zhu-Xi, PENG Cong, YANG Zhen
Chin. Phys. Lett. 2001, 18 (8):
1108-1110
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The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I-V, I-T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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Interface Effects on the Magneto-Optical Kerr Effect and Optical Properties in Co/Ni Multilayer
WANG Hai, ZHOU Yun-Song, CHEN Jin-Chang, LI Tong, ZHAO Hong-Wu, ZHAN Wen-Shan, WANG Song-You, CHEN Liang-Yao
Chin. Phys. Lett. 2001, 18 (8):
1117-1119
.
The influence of interfaces on the magneto-optical Kerr effect in the Co/Ni multilayer has been investigated. It was found that the magnetic-optical Kerr rotation varies with the numbers of interfaces (x) in Co/Ni multilayer, which indicated that the interface states play an important role in the Kerr effect. Moreover, ellipticity and optical constants n and k are also found to vary with x. Some possible mechanisms have been discussed.
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Raman Analysis of a Crystalline SiC Sample Prepared from
Carbon-Saturated Melt of Silicon
MA Jian-Ping, CHEN Zhi-Ming, LU Gang, HANG Lian-Mao, FENG Xian-Feng, LEI Tian-Min
Chin. Phys. Lett. 2001, 18 (8):
1123-1125
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Crystalline SiC samples were prepared in solidification of silicon melt saturated by carbon solved from the inner wall of a graphite crucible. The Crystalline structure of the samples was analysed in Raman spectroscopy and confirmed as 3C-SiC both in x-ray diffraction and x-ray photoelectron spectroscopy(XPS). The Raman spectra of the samples present a strong sharp peak located at 796.3 cm-1 with a full width at half maximum about 6 cm-1 and three weak peaks broadened around 1525.6, 1631.4 and 1719.1 cm-1, respectively. The former belongs to the transverse optical phonons of 3C-SiC, while the latter can be attributed to the second-order scattering. However, the longitudinal optical mode of 3C-SiC has not been found for our samples. An additional broadened peak at 532.2 cm-1 may imply the existence of some lattice defect in the samples, which is related to nitrogen introduced unintentionally into the lattice in the growth process and confirmed in XPS of N 1s binding energy centered at 400.9 eV.
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Electrorheological Effects of Cerium-Doped TiO2
YIN Jian-Bo, ZHAO Xiao-Peng,
Chin. Phys. Lett. 2001, 18 (8):
1144-1146
.
It is found that doping of cerium ion into anatase TiO2 can improve the electrorheological (ER) effects of TiO2 and broaden operational temperature range. Especially, substitution of 7-11mol% of the cerium dopant for Ti can obtain a relatively high shear stress, τ = 7.4kPa (at 4kV/mm), which is ten times larger than that of pure TiO2 ER fluid. Also, the typical Ce-doped TiO2 ER fluid shows the highest shear stress at 80°C, but 40°C for pure TiO2 ER fluid. The dielectric loss and dielectric constant at low frequency of TiO2 is improved by the doping of cerium, and the temperature dependence of the dielectric properties shows an obvious difference between pure and doped TiO2 ER fluid. These can well explain the ER behaviour of doped TiO2. Furthermore, the change of rheological and dielectric properties is discussed on the basis of the lattice distortion and defects in TiO2 arising from the doping of cerium.
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Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates
LI Xian-Jie, YAN Fa-Wang, ZHANG Wen-Jun, ZHANG Rong-Gui, LIU Wei-Ji, AO Jin-Ping, ZENG Qing-Ming, LIU Shi-Yong, LIANG Chun-Guang
Chin. Phys. Lett. 2001, 18 (8):
1147-1149
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A functional field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure. The device with a gate-length of 2 μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature. The saturated drain current is as high as 5.6 mA. The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the device, from which a larger maximum transconductance of 130 mS/mm could be estimated.
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53 articles
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