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High Power 1.5μm InGaAsP/InP Integrated Superluminescent Light Source |
| LIU Yang1;SONG Jun-Feng1;ZENG Yu-Ping1;WU Bin1;ZHANG Yuan-Tao1;QIAN Ying2;SUN Ying-Zhi2;DU Guo-Tong1 |
| Department of Electronic Engineering, State Key
1Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023
2Institute of Posts and Telecommunication, Jilin University, Changchun 130012
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| Cite this article: |
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LIU Yang, SONG Jun-Feng, ZENG Yu-Ping et al 2001 Chin. Phys. Lett. 18 1074-1077 |
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Abstract The axis of the integrated superluminescent light source was tilted with respect to the output facet normal for lasing suppression. A new phenomenon (lasing suppression) was observed in the tilted integrated device. Three new schemes were proposed and demonstrated further to suppress the lasing by analysing the reason of lasing in the tilted structure. The lasing was suppressed successfully at high pumping level, and high superluminescent power (more than 300 mW}) was obtained at a pulsed condition with the spectral full width at half maximum of 25-30 nm.
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42.50.Fx
42.55.Px
42.72.Ai
42.82.-m
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Published: 01 August 2001
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