Growth and Photoluminescence of Epitaxial CeO<suB>2</suB> Film on Si (111) Substrate

Chin. Phys. Lett.

2001, Vol. 18

Issue (3): 443-444 DOI:

Original Articles

Growth and Photoluminescence of Epitaxial CeO₂ Film on Si (111) Substrate

GAO Fei; LI Guo-Hua¹; ZHANG Jian-Hui;QIN Fu-Guang;YAO Zhen-Yu;LIU Zhi-Kai;WANG Zhan-Guo;LIN Lan-Ying

Laboratory of Semiconductor Materials Science, ¹National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

GAO Fei, LI Guo-Hua, ZHANG Jian-Hui et al 2001 Chin. Phys. Lett. 18 443-444

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Abstract CeO₂ film with a thickness of about 80 nm was deposited by a mass-analyzed low-energy dual ion beams deposition technique on Si (111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurement, indicating that stoichiometric CeO₂ was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO₂.

Keywords: 78.55.Hx 81.15.Jj

Published: 01 March 2001

PACS:	78.55.Hx	(Other solid inorganic materials)
	81.15.Jj	(Ion and electron beam-assisted deposition; ion plating)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I3/0443

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	GAO Fei
	LI Guo-Hua
	ZHANG Jian-Hui
	QIN Fu-Guang
	YAO Zhen-Yu
	LIU Zhi-Kai
	WANG Zhan-Guo
	LIN Lan-Ying

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