Photoluminescent Properties of ZnO Films Deposited on Si Substrates

Chin. Phys. Lett.

2001, Vol. 18

Issue (3): 441-442 DOI:

Original Articles

Photoluminescent Properties of ZnO Films Deposited on Si Substrates

ZHANG Guo-Bin¹;SHI Chao-Shu^1,2;HAN Zheng-Fu¹;SHI Jun-Yan¹;FU Zhu-Xi²;M. Kirm³;G. Zimmerer³

¹National Synchrotron Radiation Laboratory, ²Department of Physics, University of Science and Technology of China, Hefei 230026 ³II Institut für Experimental Physik der Universität Hamburg, Germany

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ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu et al 2001 Chin. Phys. Lett. 18 441-442

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Abstract The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation(SR) light source. The excitation spectra show a strong excitation band around 195 nm related to 390 nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290 nm was found for the first time, besides the ultraviolet emission band (390 nm) and green band (520 nm).

Keywords: 78.55.-m 78.66.-w

Published: 01 March 2001

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.66.-w	(Optical properties of specific thin films)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I3/0441

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	ZHANG Guo-Bin
	SHI Chao-Shu
	HAN Zheng-Fu
	SHI Jun-Yan
	FU Zhu-Xi
	M. Kirm
	G. Zimmerer

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