Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Al<suB>x</suB>Ga<suB>1-x</suB>N/GaN Heterostructures

Chin. Phys. Lett.

2001, Vol. 18

Issue (12): 1641-1643 DOI:

Original Articles

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Al_xGa_1-xN/GaN Heterostructures

ZHENG Ze-Wei^1,2;SHEN Bo¹;JIANG Chun-Ping²;ZHANG Rong¹;SHI Yi¹;HENG You-Dou¹;ZHENG Guo-Zhen²;GUO Shao-Ling²;CHU Jun-Hao²

¹National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 ¹National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083

Cite this article:

ZHENG Ze-Wei, SHEN Bo, JIANG Chun-Ping et al 2001 Chin. Phys. Lett. 18 1641-1643

Download: PDF(328KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al_0.22Ga_0.78N/GaN heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al_0.22Ga_0.78N layer on GaN is under partially relaxed. It is thought that the misfit dislocations induced by the partialy relaxed Al_0.22Ga_0.78N layer modulate the distribution of the piezoelectric polarization-induced charges at the Al_0.22Ga_0.78N/GaN heterointerface, and thus produce a strong modulation-potential at the heterointerface. The strong modulation-potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.

Keywords: 73.40.-c 73.40.Kp

Published: 01 December 2001

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I12/01641

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHENG Ze-Wei
	SHEN Bo
	JIANG Chun-Ping
	ZHANG Rong
	SHI Yi
	HENG You-Dou
	ZHENG Guo-Zhen
	GUO Shao-Ling
	CHU Jun-Hao

Related articles from Frontiers Journals

[1]	LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 1641-1643
[2]	CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan, , LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 1641-1643
[3]	WANG Yong, , YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(5): 1641-1643
[4]	ZHOU Bin, WANG Jin-Yan, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator**[J]. Chin. Phys. Lett., 2011, 28(10): 1641-1643
[5]	CAO Dong-Sheng, LU Hai, , CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou . A 1100⁺V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination**[J]. Chin. Phys. Lett., 2011, 28(1): 1641-1643
[6]	Attia A. Awadalla, Adel H. Phillips . Thermal Shot Noise through Boundary Roughness of Carbon Nanotube Quantum Dots**[J]. Chin. Phys. Lett., 2011, 28(1): 1641-1643
[7]	WAN Lang-Hui, YU Yun-Jin, WANG Bin. Spin Filter of Graphene Nanoribbon Based Structure[J]. Chin. Phys. Lett., 2010, 27(8): 1641-1643
[8]	GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, YANG An-Li, ZHENG Gao-Lin, WEI Hong-Yuan, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2010, 27(6): 1641-1643
[9]	LIU Hong-Gang, JIN Zhi, SU Yong-Bo, WANG Xian-Tai, CHANG Hu-Dong, ZHOU Lei, LIU Xin-Yu, WU De-Xin. Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure[J]. Chin. Phys. Lett., 2010, 27(5): 1641-1643
[10]	ZHU Bin, HAN Qin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, NIU Zhi-Chuan, WANG Xin, WANG Xiu-Ping, WANG Jie. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs[J]. Chin. Phys. Lett., 2010, 27(3): 1641-1643
[11]	JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, MA Wen-Quan, WANG Zhan-Guo. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2010, 27(2): 1641-1643
[12]	DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells*[J]. Chin. Phys. Lett., 2010, 27(11): 1641-1643
[13]	GE Ji, JIN Zhi, SU Yong-Bo, CHENG Wei, WANG Xian-Tai, CHEN Gao-Peng, LIU Xin-Yu. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect[J]. Chin. Phys. Lett., 2009, 26(7): 1641-1643
[14]	G. Güler, Ö, . Güllü, S. Karatas, Ö, . F. Bakkaloglu. *Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V* and C-V Measurements**[J]. Chin. Phys. Lett., 2009, 26(6): 1641-1643
[15]	ZHAO De-Gang, JIANG De-Sheng, LIU Zong-Shun, ZHU Jian-Jun, WANG Hui, ZHANG Shu-Ming, YANG Hui,. An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors[J]. Chin. Phys. Lett., 2009, 26(5): 1641-1643

Viewed

Full text

Abstract