Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide

Chin. Phys. Lett.

2001, Vol. 18

Issue (12): 1595-1597 DOI:

Original Articles

Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide

LI Fei-Fei¹;XU Jing-Jun¹;KONG Yong-Fa¹;HUANG Hui¹;ZHANG Guang-Yin¹;YANG Chun-Hui²;XU Yu-Heng²

¹Photonics Research Center, College of Physical Science, Nankai University, Tianjin 300071 ²Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001

Cite this article:

LI Fei-Fei, XU Jing-Jun, KONG Yong-Fa et al 2001 Chin. Phys. Lett. 18 1595-1597

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Abstract Light-induced absorption in the nominally pure bismuth silicon oxide is investigated experimentally and the result shows that it consists of a transient and persistent part. The experiment evidence is analysed based on the model of three groups of trap (donor) centers.

Keywords: 42.65.-k

Published: 01 December 2001

PACS:

42.65.-k

(Nonlinear optics)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I12/01595

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	LI Fei-Fei
	XU Jing-Jun
	KONG Yong-Fa
	HUANG Hui
	ZHANG Guang-Yin
	YANG Chun-Hui
	XU Yu-Heng

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