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Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches |
| SHI Wei1;ZHAO Wei2;LIANG Zhen-Xian3;SUN Xiao-Wei4 |
| 1Applied Physics Department, Xi’an University of
Technology, Xi’an 710048
2State Kay Laboratory of Transient Optics and Technology, Xi’an 710068
3School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049
4Division of Microelectronics, Nanyang Technological University, Singapore 639798 |
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| Cite this article: |
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SHI Wei, ZHAO Wei, LIANG Zhen-Xian et al 2001 Chin. Phys. Lett. 18 1479-1480 |
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Abstract The transient transport of photo-generated carriers and temporal variation of the built-in field, during triggering in semi-insulating GaAs photoconductive switches, have been investigated by using a special Monte Carlo particle simulator. It shows that the built-in field can exceed the intrinsic avalanche field of semi-insulating GaAs under certain optical and electrical condition. In such a case, local breakdown ionization is considered to be responsible for the transition in GaAs high-gain switching. The optical and electrical triggering thresholds are calculated and the calculated values of optical and electrical thresholds and partial delay time are in agreement with the published experimental data.
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| Keywords:
42.65.Re
72.40.+w
71.20.Nr
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Published: 01 November 2001
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| PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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71.20.Nr
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(Semiconductor compounds)
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