Reflectivity of W/Si Multilayer at the Photoenergy of 700eV
and 1200eV

Chin. Phys. Lett.

2001, Vol. 18

Issue (11): 1481-1482 DOI:

Original Articles

Reflectivity of W/Si Multilayer at the Photoenergy of 700eV and 1200eV

FENG Shi-Meng;ZHU Guo-Long;SHAO Jian-Da;YI Kui;FAN Zheng-Xiu

Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences P. O. Box 800-211, Shanghai 201800

Cite this article:

FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da et al 2001 Chin. Phys. Lett. 18 1481-1482

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Abstract We have deposited W/Si multilayer mirrors using magnetron
sputtering, and measured their reflectivity at the Beijing synchrotron Radiation Facility. The W/Si multilayer mirrors show the peak reflectivity of approximately 10% at a photo-energy of 1200eV and 10.5% at a photo-energy of 700eV at the incidence angle of 81°. So far, no higher reflectivity than that given in this letter has been reported.

Keywords: 42.79.Bh 68.65.+g 61.10.Eq 78.66.-w 81.15.Cd

Published: 01 November 2001

PACS:	42.79.Bh	(Lenses, prisms and mirrors)
	68.65.+g
	61.10.Eq
	78.66.-w	(Optical properties of specific thin films)
	81.15.Cd	(Deposition by sputtering)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I11/01481

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