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A New Silicon-Based Ferroelectric Sandwich Structure
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| REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian
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| Institute of Microelectronics, Tsinghua University, Beijing 100084
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| Cite this article: |
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REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian et al 2001 Chin. Phys. Lett. 18 132-133 |
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Abstract A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 sandwich structure is fabricated by a sol--gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100°C. Capacitance--voltage, polarization--electric field and dielectric--frequency properties of this sandwich structure are studied. The Pb(ZrxTi1-x)O3 films are proved to have good dielectric and ferroelectric properties.
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| Keywords:
85.50.+k
84.-s
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Published: 01 January 2001
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| PACS: |
85.50.+k
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77
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(Dielectrics, piezoelectrics, and ferroelectrics and their properties)
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84.-s
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