Growth and Characterization of Modulation-Doped
Al<suB>x</suB>Ga<suB>1-x</suB>N/GaN Heterostructures

Chin. Phys. Lett.

2001, Vol. 18

Issue (1): 129-131 DOI:

Original Articles

Growth and Characterization of Modulation-Doped Al_xGa_1-xN/GaN Heterostructures

SHEN Bo¹;ZHANG Rong¹;SHI Yi¹;ZHENG You-Dou¹;T. Someya²;Y. Arakawa²,

¹National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 ²Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan

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SHEN Bo, ZHANG Rong, SHI Yi et al 2001 Chin. Phys. Lett. 18 129-131

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Abstract The modulation-doped Al_0.22Ga_0.78N/GaN heterostructures with different Al_0.22Ga_0.78N barrier thicknesses were grown by means of metal--organic chemical vapour deposition. The Al_0.22Ga_0.78N layer still has pseudomorphic growth when its thickness is 53nm. The mobility of the two-dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and 77K. The dramatic decrease of the 2DEG mobility in an Al_0.22Ga_0.78N/GaN heterostructure corresponds to the partial relaxation of the Al_0.22Ga_0.78N barrier.

Keywords: 81.15.Gh 73.50.Dn

Published: 01 January 2001

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	73.50.Dn	(Low-field transport and mobility; piezoresistance)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I1/0129

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	SHEN Bo
	ZHANG Rong
	SHI Yi
	ZHENG You-Dou
	T. Someya
	Y. Arakawa

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