| Original Articles |
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Characterization of Pb( Zr0.53Ti0.47)O3 Films on GaN |
| LI Wei-Ping;ZHANG Rong;ZHOU Yu-Gang;YIN Jiang;SHEN Bo;SHI Yi;CHEN Zhi-Zhong;CHEN Peng;LIU Zhi-Guo;ZHENG You-Dou
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| Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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LI Wei-Ping, ZHANG Rong, ZHOU Yu-Gang et al 2000 Chin. Phys. Lett. 17 137-138 |
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Abstract GaN/Pb(Zr0.53Ti0.47)O3 structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10-11A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb (Zr0.53Ti0.47)O3 films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.
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| Keywords:
81.05.Ea
81.05.Je
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Published: 01 February 2000
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.05.Je
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(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
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