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Transport Properties of a Classical One-Dimensional Kicked Billiard Model
CHEN He-Sheng, WANG Jiao, GU Yan
Chin. Phys. Lett. 2000, 17 (2):
85-87
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We study a classical I-dimensional kicked billiard model and investigate its transport behavior. The roles played by the two system parameters α and K, governing the direction and strength of the kick, respectively, are found to be quite crucial. For the perturbations which are not strong, i.e. K < 1, we find that as the phase parameter α changes within its range of interest from –π/2 to π/2, the phase space is in turn characterized by the structure of a prevalently connected stochastic web (-π/2 ≤ α < 0), local stochastic webs surrounded by a stochastic sea (0 < α < π/2) and the global stochastic sea (α=π/2). Extensive numerical investigations also indicate that the system's transport behavior in the irregular regions of the phase space for K < 1 has a dependence on the system parameters and the transport coefficient D can be expressed as D≈D0(α)Kf(α) For strong kicks, i.e. K>> 1, the phase space is occupied by the stochastic sea, and the transport behavior of the system seems to be similar to that of the kicked rotor and independent of α.
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Silica Colloidal Crystals with Ethanol Solvent
LI Zhao-Lin, NI Pei-Gen, CHENG Bing-Ying, JIN Chong-Jun, ZHANG Dao-Zhong, DONG Peng, GUO Xing-Cai
Chin. Phys. Lett. 2000, 17 (2):
112-114
.
We have prepared a silica colloidal crystal with ethanol, which has a face-centered cubic structure and a corresponding photonic band gap located in the visible region, determined by Kossel ring analysis and the transmission spectra. A special feature is an apparent variation of its lattice constant, as well as the gap frequency, with sample height. The Raman scattering induced by a picosecond laser at different heights of the colloidal crystal has been measured. It is found that the intensity of the Raman scattering is not related sensitively to the photonic gap, even though the Raman-Stokes Wavelength is inside the gap.
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Characterization of Pb( Zr0.53Ti0.47)O3 Films on GaN
LI Wei-Ping, ZHANG Rong, ZHOU Yu-Gang, YIN Jiang, SHEN Bo, SHI Yi, CHEN Zhi-Zhong, CHEN Peng, LIU Zhi-Guo, ZHENG You-Dou
Chin. Phys. Lett. 2000, 17 (2):
137-138
.
GaN/Pb(Zr0.53Ti0.47)O3 structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10-11A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb (Zr0.53Ti0.47)O3 films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.
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29 articles
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