| Original Articles |
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Study of Blue Emission from Nano-SiC Powders During Rapid Thermal Annealing |
| LIU Yu-zhen1;SHI Wan-quan1;HUANG Yun-lan2;LIU Shi-xiang1;HAN Yi-qin1;LU Zhong-qian3;TAN Shou-hong3;JIANG Dong-liang3 |
| 1The Graduate School, University of Science and Technology of China, Beijing 100039
2Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
3Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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LIU Yu-zhen, SHI Wan-quan, HUANG Yun-lan et al 1999 Chin. Phys. Lett. 16 602-604 |
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Abstract Nanometric SiC powder was prepared by chemical vapor deposition at 1100°C, and samples were subsequently treated by rapid thermal annealing at 600-1100°C. The intensities of the blue photoluminescence were then measured a t room temperature. The peak intensity at 2.56 eV (484 nm) rises with annealing temperature, reaching a value about 9.2 times as high at 800°C, then drops very quickly at 900°C. Based on the results of x-ray diffraction, infrared spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscopy, we conclude that the amounts of the twofold coordinated Si on the surface of the nanometric SiC particles play an important role in the photoluminescence intensity.
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| Keywords:
78.55.-m
61.46.+w
61.72.-y
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Published: 01 August 1999
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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61.46.+w
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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