Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation

Chin. Phys. Lett.

1999, Vol. 16

Issue (8): 586-588 DOI:

Original Articles

Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation

CHEN Zhi-quan;WANG Zhu;WANG Shao-jie

Department of Physics, Wuhan University, Wuhan 430072

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CHEN Zhi-quan, WANG Zhu, WANG Shao-jie 1999 Chin. Phys. Lett. 16 586-588

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Abstract Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.

Keywords: 61.72.Ji 78.70.Bj 71.55.Eq

Published: 01 August 1999

PACS:	61.72.Ji
	78.70.Bj	(Positron annihilation)
	71.55.Eq	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I8/0586

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