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Electron Aceleration Process in ZnS-Type Thin Film Electroluminescence Devices |
| ZHAO Hui;WANG Yong-sheng;XU Zheng;XU Xu-rong |
| Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 |
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| Cite this article: |
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ZHAO Hui, WANG Yong-sheng, XU Zheng et al 1999 Chin. Phys. Lett. 16 217-219 |
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Abstract Based on the calculations about scattering rates, the electron acceleration process of ZnS-type thin film electroluminescent devices is studied in detail through Monte Carlo method. The acceleration time and drift length before the balance of acceleration and Scattering are about 200 fs and 30-40nm, respectively. The steady average kinetic energy of electrons increases with electric field. Field emission process of electrons trapped at interface states only affects the acceleration process of electron transport and makes no influence on steady state. New explanations about the “dead layer” phenomenon and the overshoot in the averge drift velocity are proposed based on the calculations.
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| Keywords:
78.60.Fi
73.50.Fq
72.20.Ht
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Published: 01 March 1999
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| PACS: |
78.60.Fi
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(Electroluminescence)
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73.50.Fq
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(High-field and nonlinear effects)
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72.20.Ht
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(High-field and nonlinear effects)
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