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Octupole Deformation Bands of πh ll/2 in Neutron-Rich 145,147La Nuclei
ZHU Sheng-jiang, WANG Mu-ge, J. H. Hamilton, A. V. Ramayya, B. R. S. Babu, W. C. Ma, LONG Gui-lu, ZHU Ling-yan, LI Ming, A. Sakhaee, GAN Cui-yun
Chin. Phys. Lett. 1999, 16 (3):
169-171
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Octupole deformation bands built on πh ll/2 orbital in neutron-rich odd-Z 145,147La nuclei have been investigated by measuring the prompt γ-rays emitted from the 252Cf source. The alternating parity band structures and strong E1 transitions observed between negative- and positive-parity bands in both nuclei indicate the octupole deformation enhanced by the h ll/2 single proton coupling. According to observed energy displacements the octupole deformation becomes stable at the intermediate spin states.
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Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport
ZHAO Jian-hua, LI Yan-chun, LIU Ri-ping, ZHANG Xiang-yi, ZHOU Zhen-hua, WANG Chao-ying, XU Ying-fan, WANG Wen-kui,
Chin. Phys. Lett. 1999, 16 (3):
208-210
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Single crystals of β–FeSi2 have been grown from vapor by employing chemical vapor transport technique and using iodine as transport agent in a closed ampoule. In the experiment, β–FeSi2 single crystals with well-developed faces and edges have been observed on the silicon substrate, but no needlelike ones have been found. The changes in the size and the geometric shape of the growth ampoule and temperature gradient are primary factors which result in the variation on β–FeSi2 single crystal morphology.
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High Brightness and Efficiency Yellow-Emitting Organic Electroluminescent Device
HUANG Jing-song, XIE Zhi-yuan, YANG Kai-xia, LI Chuan-nan, HOU Jing-ying, LIU Shi-yong
Chin. Phys. Lett. 1999, 16 (3):
226-228
.
Yellow-light-emitting organic electroluminescent device with multilayer thin-film structure, which shows high brightness and efficiency, is constructed. The hole-transport layer is an N,N'-bis(3-methyphenyl)-N,N'-diphenylbe-nzidine film. The electron-transport layer is an 8-(quinolinolate)-aluminum(A1q) film. The luminescent layer consists of a host material Alq and an emitting dopant 5,6,11,12-petraphenyInaphthacene. The doped device exhibited the maximum emission 40000cd/m2 at 19V, and the maximum efficiency of 3.141m/W, which have been improved by about six and three times, respectively, in comparison with that in undoped device. For the unpackaged device, a luminance half-life on the order of about 230 h has been achieved with a constant current density of 15mA/cm2, starting at 500cd/m2 at the room temperature under ambient atmosphere.
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27 articles
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