Growth and Morphology of β–FeSi<suB>2</suB> Single Crystal with Chemical Vapor Transport

Chin. Phys. Lett.

1999, Vol. 16

Issue (3): 208-210 DOI:

Original Articles

Growth and Morphology of β–FeSi₂ Single Crystal with Chemical Vapor Transport

ZHAO Jian-hua^1,2;LI Yan-chun²;LIU Ri-ping²;ZHANG Xiang-yi¹;ZHOU Zhen-hua¹;WANG Chao-ying¹;XU Ying-fan¹;WANG Wen-kui^1,2

¹Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ²Institute of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004

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ZHAO Jian-hua, LI Yan-chun, LIU Ri-ping et al 1999 Chin. Phys. Lett. 16 208-210

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Abstract Single crystals of β–FeSi₂ have been grown from vapor by employing chemical vapor transport technique and using iodine as transport agent in a closed ampoule. In the experiment, β–FeSi₂ single crystals with well-developed faces and edges have been observed on the silicon substrate, but no needlelike ones have been found. The changes in the size and the geometric shape of the growth ampoule and temperature gradient are primary factors which result in the variation on β–FeSi₂ single crystal morphology.

Keywords: 75.50.Bb 81.10.Bk 52.75.Rx

Published: 01 March 1999

PACS:	75.50.Bb	(Fe and its alloys)
	81.10.Bk	(Growth from vapor)
	52.75.Rx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I3/0208

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	ZHAO Jian-hua
	LI Yan-chun
	LIU Ri-ping
	ZHANG Xiang-yi
	ZHOU Zhen-hua
	WANG Chao-ying
	XU Ying-fan
	WANG Wen-kui

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