Plasma Enhanced Chemical Vapor Deposition Synthesizing Carbon Nitride Hard Thin Films

Chin. Phys. Lett.

1998, Vol. 15

Issue (12): 913-915 DOI:

Original Articles

Plasma Enhanced Chemical Vapor Deposition Synthesizing Carbon Nitride Hard Thin Films

ZHANG Zhi-hong;GUO Huai-xi;MENG Xian-quan;YE Ming-sheng;ZHANG Wei;FAN Xiang-jun

Department of Physics, Wuhan University, Wuhan 430072

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ZHANG Zhi-hong, GUO Huai-xi, MENG Xian-quan et al 1998 Chin. Phys. Lett. 15 913-915

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Abstract Using plasma enhanced chemical vapor deposition and SiC and carbon buffer layers, we have obtained carbon nitride thin films on Si(100) and Si(111). The x-ray diffraction and x-ray photoelectron spectroscopy are used to characterize the thin films. The Vickers hardness of the carbon nitride thin films is more than 5100kgf/mm² and comparable to that of diamond.

Keywords: 68.55.Jk 68.35.Gy 68.35.Md

Published: 01 December 1998

PACS:	68.55.Jk
	68.35.Gy	(Mechanical properties; surface strains)
	68.35.Md	(Surface thermodynamics, surface energies)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I12/0913

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	ZHANG Zhi-hong
	GUO Huai-xi
	MENG Xian-quan
	YE Ming-sheng
	ZHANG Wei
	FAN Xiang-jun

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