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Reaction Processes at the Initial Stage of Diamond Nucleation on the Surface of Si(111) |
| XIE Fang-qing;ZHANG Qing-zhe;LIN Zhang-da |
| State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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XIE Fang-qing, ZHANG Qing-zhe, LIN Zhang-da 1998 Chin. Phys. Lett. 15 910-912 |
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Abstract The thermal behavior of CHx (x=2,3) radicals and H atoms adsorbed on Si (111) surface was investigated by high-resolution electron-energy-loss spectroscopy, quadrupole mass spectrometry, and low-energy electron diffraction. Based on the analysis of thermal desorption mass spectrometry, the initial stage of diamond nucleation on Si is speculated. Compared with the result reported by Lee for diamond, it is concluded that low stability of hydrocarbon species on Si is the basic reason which results in the difficulty of diamond nucleation on perfect Si surface.
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| Keywords:
68.45.Da
81.15.Gh
68.35.-p
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Published: 01 December 1998
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| PACS: |
68.45.Da
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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