C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 732-733 DOI:

Original Articles

C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation

HUANG Ji-po;WANG Lian-wei;SHEN Qin-wo;GAO Jian-xia;NI Ru-shan;LIN Cheng-lu

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050

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HUANG Ji-po, WANG Lian-wei, SHEN Qin-wo et al 1998 Chin. Phys. Lett. 15 732-733

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Abstract A new technique for the preparation of AlN thin films by ultrahigh vacuum electron beam evaporation of AI followed by nitridation is reported and by using this method c-axis oriented AJN thin films have been success-fully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and cross-sectional transmission electron microscope were employed to characterize AIN films. Temperature of nitridation was found to play an important role in the formation of AIN film. By post-nitridation of as-deposited film at 1000°C for lh in N₂, the crystalline AlN film with (002) orientation has been obtained.

Keywords: 68.55.-a 68.55.Jk 81.15.Ef

Published: 01 October 1998

PACS:	68.55.-a	(Thin film structure and morphology)
	68.55.Jk
	81.15.Ef

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0732

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	HUANG Ji-po
	WANG Lian-wei
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	NI Ru-shan
	LIN Cheng-lu

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